| PART |
Description |
Maker |
| K4M64163PH-RG K4M64163PH K4M64163PH-RBF1L K4M64163 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP 100万16 × 4银行4CSP移动SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4M51163LENBSP K4M51163LE K4M51163LE-F K4M51163LE- |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163L |
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K |
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
|
Samsung semiconductor
|
| HY57V561620CLT-6 HY57V561620CLT-8 HY57V561620CLT-K |
4 BANKS X 4M X 16BIT SYNCHRONOUS DRAM
|
Hynix Semiconductor
|
| IC43R16800 |
2M x 16bit x 4 Banks DDR SDRAM
|
Integrated Circuit Solution
|
| K4S561632D |
4M x 16Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| K4S641633F-GLN |
1M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
|
Samsung Electronic
|
| IC42S16400 IC42S16400-7TI IC42S16400-7TIG IC42S164 |
DYNAMIC RAM
1M x 16Bit x 4 Banks (64-MBIT) SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| K4S281632E-TC7C K4S281632E-TL7C |
2M x 16bit x 4 banks synchronous DRAM LVTTL, 133MHz
|
Samsung Electronic
|
| K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S561633C-RLN |
4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP Data Sheet
|
Samsung Electronic
|
